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SSM3K35CTC,L3F

MOSFET N-CH 20V 250MA CST3C | Toshiba Semiconductor and Storage
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Overview
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Product Description

N-Channel 20 V 250mA (Ta) 500mW (Ta) Surface Mount CST3C

Features

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±10V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: SC-101, SOT-883
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Operating Temperature: 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
  • Power Dissipation (Max): 500mW (Ta)
  • Supplier Device Package: CST3C
  • Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
  • Drain to Source Voltage (Vdss): 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)