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TK7R7P10PL,RQ

X35 PB-F POWER MOSFET TRANSISTOR | Toshiba Semiconductor and Storage
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Overview
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Product Description

N-Channel 100 V 55A (Tc) 93W (Tc) Surface Mount DPAK

Features

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Operating Temperature: 175°C
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
  • Power Dissipation (Max): 93W (Tc)
  • Supplier Device Package: DPAK
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Drain to Source Voltage (Vdss): 100 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)