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TPH3R008QM,LQ

80V UMOS9-H SOP-ADVANCE(N) 3MOHM | Toshiba Semiconductor and Storage
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Overview
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Product Description

N-Channel 80 V 100A (Tc) 3W (Ta), 180W (Tc) Surface Mount 8-SOP Advance (5x5.75)

Features

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: 8-PowerTDFN
  • Vgs(th) (Max) @ Id: 3.5V @ 900µA
  • Operating Temperature: 175°C
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
  • Power Dissipation (Max): 3W (Ta), 180W (Tc)
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
  • Drain to Source Voltage (Vdss): 80 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 40 V
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)