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TPHR9003NL,L1Q

MOSFET N-CH 30V 60A 8SOP | Toshiba Semiconductor and Storage
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Overview
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Product Description

N-Channel 30 V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)

Features

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: 8-PowerVDFN
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Operating Temperature: 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V
  • Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Drain to Source Voltage (Vdss): 30 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 15 V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)