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150V U-MOS X-H SOP-ADVANCE(N) 9M | Toshiba Semiconductor and Storage
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Overview
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Product Description

N-Channel 150 V 64A (Tc) 210W (Tc) Surface Mount 8-SOP Advance (5x5)

Features

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: 8-PowerVDFN
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Operating Temperature: 175°C
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
  • Power Dissipation (Max): 210W (Tc)
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Drain to Source Voltage (Vdss): 150 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)