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TK39N60W5,S1VF

MOSFET N-CH 600V 38.8A TO247 | Toshiba Semiconductor and Storage
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Product Description

N-Channel 600 V 38.8A (Ta) 270W (Tc) Through Hole TO-247

Features

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±30V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Through Hole
  • Qualification: -
  • Package / Case: TO-247-3
  • Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
  • Operating Temperature: 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
  • Power Dissipation (Max): 270W (Tc)
  • Supplier Device Package: TO-247
  • Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
  • Drain to Source Voltage (Vdss): 600 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)