Product Description
N-Channel 60 V 190mA (Ta), 300mA (Tc) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
Features
- Grade: -
- FET Type: N-Channel
- Vgs (Max): ±20V
- Technology: MOSFET (Metal Oxide)
- FET Feature: -
- Mounting Type: Surface Mount
- Qualification: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
- Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
- Supplier Device Package: TO-236AB
- Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
- Drain to Source Voltage (Vdss): 60 V
- Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), 300mA (Tc)
