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BSS123NH6327XTSA1

MOSFET N-CH 100V 190MA SOT23-3 | Infineon Technologies
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Product Description

N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23

Features

  • Grade: Automotive
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: AEC-Q101
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Vgs(th) (Max) @ Id: 1.8V @ 13µA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
  • Power Dissipation (Max): 500mW (Ta)
  • Supplier Device Package: PG-SOT23
  • Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
  • Drain to Source Voltage (Vdss): 100 V
  • Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)