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RU1J002YNTCL

MOSFET N-CH 50V 200MA UMT3F | Rohm Semiconductor
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Overview
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Product Description

N-Channel 50 V 200mA (Ta) 150mW (Ta) Surface Mount UMT3F

Features

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±8V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: SC-85
  • Vgs(th) (Max) @ Id: 800mV @ 1mA
  • Operating Temperature: 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
  • Power Dissipation (Max): 150mW (Ta)
  • Supplier Device Package: UMT3F
  • Drain to Source Voltage (Vdss): 50 V
  • Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)