Product Description
N-Channel 20 V 750mA (Ta) 470mW (Ta) Surface Mount X2-DFN1006-3
Features
- Grade: -
- FET Type: N-Channel
- Vgs (Max): ±12V
- Technology: MOSFET (Metal Oxide)
- FET Feature: -
- Mounting Type: Surface Mount
- Qualification: -
- Package / Case: 3-XFDFN
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
- Power Dissipation (Max): 470mW (Ta)
- Supplier Device Package: X2-DFN1006-3
- Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
- Drain to Source Voltage (Vdss): 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
