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SSM6N67NU,LF

MOSFET 2N-CH 30V 4A 6DFN | Toshiba Semiconductor and Storage
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Product Description

Mosfet Array 30V 4A (Ta) 2W (Ta) Surface Mount 6-µDFN (2x2)

Features

  • Technology: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Power - Max: 2W (Ta)
  • Configuration: 2 N-Channel (Dual)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Operating Temperature: 150°C
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
  • Supplier Device Package: 6-µDFN (2x2)
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Drain to Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)