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Discrete Semiconductor Products
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MOSFET N-CH 20V 750MA 3DFN

DMN2400UFB-7

MOSFET N-CH 20V 750MA 3DFN | Diodes Incorporated
MOSFET N-CH 20V 750MA 3DFN
Fiyat Aralığı
$0,03340 - $0,31100
Fiyatlar 2 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

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TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
003 - 4Pending refreshStokta Yok
Arrow
03000
$0,04330 (Min: 3000)
$0,04120 (Min: 6000)
$0,03740 (Min: 9000)
$0,03550 (Min: 15000)
$0,03340 (Min: 21000)
Daha fazla göster		3 - 421 Kasım 2025 19:06Stokta Yok
Mouser
320251
$0,31100 (Min: 1)
$0,18700 (Min: 10)
$0,11700 (Min: 100)
$0,08700 (Min: 500)
$0,07600 (Min: 1000)
$0,05700 (Min: 3000)
$0,05200 (Min: 6000)
$0,04400 (Min: 9000)
Daha fazla göster		3 - 421 Kasım 2025 19:06Ekle
Farnell
003 - 4Pending refreshStokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
002 - 3 haftaPending refreshStokta Yok
Genel Bakış
Dokümanlar

Ürün Açıklaması

N-Channel 20 V 750mA (Ta) 470mW (Ta) Surface Mount X1-DFN1006-3

Özellikler

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±12V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: 3-UFDFN
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 600mA, 4.5V
  • Power Dissipation (Max): 470mW (Ta)
  • Supplier Device Package: X1-DFN1006-3
  • Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
  • Drain to Source Voltage (Vdss): 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 16 V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
https://www.diodes.com/assets/Datasheets/ds31963.pdf