EMD29T2R

Ürün Açıklaması

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 250MHz, 260MHz 120mW Surface Mount EMT6

Özellikler

• Grade: -
• Power - Max: 120mW
• Mounting Type: Surface Mount
• Qualification: -
• Package / Case: SOT-563, SOT-666
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Resistor - Base (R1): 1kOhms, 10kOhms
• Frequency - Transition: 250MHz, 260MHz
• Supplier Device Package: EMT6
• Resistor - Emitter Base (R2): 10kOhms
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
• Current - Collector (Ic) (Max): 100mA, 500mA
• Current - Collector Cutoff (Max): 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 140 @ 100mA, 2V
• Voltage - Collector Emitter Breakdown (Max): 50V, 12V