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RN4989FE,LF(CT

TRANS PREBIAS 1NPN 1PNP 50V ES6 | Toshiba Semiconductor and Storage
Fiyat Aralığı
$0,02700 - $0,21100
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Future Electronics
003 - 4Pending refreshStokta Yok
Arrow
003 - 4Pending refreshStokta Yok
Mouser
01
$0,21100 (Min: 1)
$0,12800 (Min: 10)
$0,08000 (Min: 100)
$0,05900 (Min: 500)
$0,05200 (Min: 1000)
$0,04700 (Min: 2000)
$0,03500 (Min: 4000)
$0,03000 (Min: 8000)
$0,02900 (Min: 24000)
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3 - 405 Aralık 2025 20:04Stokta Yok
Farnell
003 - 4Pending refreshStokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
40004000
$0,04693 (Min: 4000)
$0,04206 (Min: 8000)
$0,03958 (Min: 12000)
$0,03678 (Min: 20000)
$0,03512 (Min: 28000)
$0,03352 (Min: 40000)
$0,02999 (Min: 100000)
$0,02780 (Min: 200000)
$0,02700 (Min: 400000)
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23 hafta05 Aralık 2025 20:05Ekle
Genel Bakış
Dokümanlar

Ürün Açıklaması

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6

Özellikler

  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Resistor - Base (R1): 47kOhms
  • Frequency - Transition: 250MHz, 200MHz
  • Supplier Device Package: ES6
  • Resistor - Emitter Base (R2): 22kOhms
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector (Ic) (Max): 100mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Voltage - Collector Emitter Breakdown (Max): 50V