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RN4985,LF(CT

TRANS PREBIAS 1NPN 1PNP 50V US6 | Toshiba Semiconductor and Storage
Fiyat Aralığı
$0,03000 - $0,23000
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TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
003 - 4Pending refreshStokta Yok
Arrow
003 - 4Pending refreshStokta Yok
Mouser
01
$0,23000 (Min: 1)
$0,14000 (Min: 10)
$0,08600 (Min: 100)
$0,06300 (Min: 500)
$0,05600 (Min: 1000)
$0,04400 (Min: 3000)
$0,04000 (Min: 6000)
$0,03300 (Min: 9000)
$0,03100 (Min: 24000)
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3 - 406 Aralık 2025 10:30Stokta Yok
Farnell
003 - 4Pending refreshStokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
03000
$0,05340 (Min: 3000)
$0,04780 (Min: 6000)
$0,04493 (Min: 9000)
$0,04171 (Min: 15000)
$0,03980 (Min: 21000)
$0,03796 (Min: 30000)
$0,03389 (Min: 75000)
$0,03137 (Min: 150000)
$0,03000 (Min: 300000)
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23 hafta06 Aralık 2025 10:31Stokta Yok
Genel Bakış
Dokümanlar

Ürün Açıklaması

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6

Özellikler

  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Resistor - Base (R1): 2.2kOhms
  • Frequency - Transition: 250MHz, 200MHz
  • Supplier Device Package: US6
  • Resistor - Emitter Base (R2): 47kOhms
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector (Ic) (Max): 100mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Voltage - Collector Emitter Breakdown (Max): 50V