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RN1406,LF

TRANS PREBIAS NPN 50V 0.1A SMINI | Toshiba Semiconductor and Storage
Fiyat Aralığı
$0,02410 - $0,19000
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TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
003 - 4Pending refreshStokta Yok
Arrow
003 - 4Pending refreshStokta Yok
Mouser
65381
$0,19000 (Min: 1)
$0,11700 (Min: 10)
$0,07300 (Min: 100)
$0,05300 (Min: 500)
$0,04700 (Min: 1000)
$0,03700 (Min: 3000)
$0,03300 (Min: 6000)
$0,02700 (Min: 9000)
$0,02600 (Min: 24000)
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3 - 425 Aralık 2025 19:07Ekle
Farnell
003 - 4Pending refreshStokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
30003000
$0,04492 (Min: 3000)
$0,04008 (Min: 6000)
$0,03762 (Min: 9000)
$0,03485 (Min: 15000)
$0,03320 (Min: 21000)
$0,03161 (Min: 30000)
$0,02809 (Min: 75000)
$0,02592 (Min: 150000)
$0,02410 (Min: 300000)
Daha fazla göster
2 - 3 hafta25 Aralık 2025 19:07Ekle
Genel Bakış
Dokümanlar

Ürün Açıklaması

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount S-Mini

Özellikler

  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Transistor Type: NPN - Pre-Biased
  • Resistors Included: R1 and R2
  • Resistor - Base (R1): 4.7 kOhms
  • Frequency - Transition: 250 MHz
  • Supplier Device Package: S-Mini
  • Resistor - Emitter Base (R2): 47 kOhms
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector (Ic) (Max): 100 mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Voltage - Collector Emitter Breakdown (Max): 50 V