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RN1314,LF

TRANS PREBIAS NPN 50V 0.1A USM | Toshiba Semiconductor and Storage
Fiyat Aralığı
$0,01880 - $0,16000
Fiyatlar 2 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

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TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
003 - 4Pending refreshStokta Yok
Arrow
003 - 4Pending refreshStokta Yok
Mouser
01
$0,16000 (Min: 1)
$0,09700 (Min: 10)
$0,06000 (Min: 100)
$0,04300 (Min: 500)
$0,03800 (Min: 1000)
$0,03000 (Min: 3000)
$0,02700 (Min: 6000)
$0,02100 (Min: 9000)
$0,02000 (Min: 24000)
Daha fazla göster
3 - 406 Aralık 2025 11:18Stokta Yok
Farnell
003 - 4Pending refreshStokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
03000
$0,03600 (Min: 3000)
$0,03202 (Min: 6000)
$0,02998 (Min: 9000)
$0,02768 (Min: 15000)
$0,02633 (Min: 21000)
$0,02501 (Min: 30000)
$0,02210 (Min: 75000)
$0,02032 (Min: 150000)
$0,01880 (Min: 300000)
Daha fazla göster
23 hafta06 Aralık 2025 11:19Stokta Yok
Genel Bakış
Dokümanlar

Ürün Açıklaması

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount USM

Özellikler

  • Grade: Automotive
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Qualification: AEC-Q101
  • Package / Case: SC-70, SOT-323
  • Transistor Type: NPN - Pre-Biased
  • Resistors Included: R1 and R2
  • Resistor - Base (R1): 1 kOhms
  • Frequency - Transition: 250 MHz
  • Supplier Device Package: USM
  • Resistor - Emitter Base (R2): 10 kOhms
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector (Ic) (Max): 100 mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Voltage - Collector Emitter Breakdown (Max): 50 V