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RN1130MFV,L3F

TRANS PREBIAS NPN 50V 0.1A VESM | Toshiba Semiconductor and Storage
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$0,02250 - $0,18000
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01
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08000
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Genel Bakış
Dokümanlar

Ürün Açıklaması

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 150 mW Surface Mount VESM

Özellikler

  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Transistor Type: NPN - Pre-Biased
  • Resistors Included: R1 and R2
  • Resistor - Base (R1): 100 kOhms
  • Frequency - Transition: 250 MHz
  • Supplier Device Package: VESM
  • Resistor - Emitter Base (R2): 100 kOhms
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector (Ic) (Max): 100 mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Voltage - Collector Emitter Breakdown (Max): 50 V