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Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
MOSFET N-CH 20V 6A SOT23-3

SI2312CDS-T1-GE3

MOSFET N-CH 20V 6A SOT23-3 | Vishay Siliconix
MOSFET N-CH 20V 6A SOT23-3
Fiyat Aralığı
$0,11400 - $0,12900
Fiyatlar 2 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

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TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
360003000
$0,12900 (Min: 3000)
$0,12800 (Min: 6000)
$0,12700 (Min: 9000)
$0,12600 (Min: 12000)
$0,12400 (Min: 15000)
Daha fazla göster		3 - 412 Aralık 2025 22:57Ekle
Arrow
03000
$0,11760 (Min: 3000)
$0,11420 (Min: 6000)
$0,11400 (Min: 9000)
3 - 412 Aralık 2025 22:57Stokta Yok
Mouser
003 - 4Pending refreshStokta Yok
Farnell
003 - 4Pending refreshStokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
002 - 3 haftaPending refreshStokta Yok
Genel Bakış
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Ürün Açıklaması

N-Channel 20 V 6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

Özellikler

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±8V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
  • Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
  • Drain to Source Voltage (Vdss): 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
https://www.vishay.com/docs/65900/si2312cd.pdf