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SI2387DS-T1-GE3

P-CHANNEL -80V SOT-23, 164 M @ 1 | Vishay Siliconix
Fiyat Aralığı
$0,09740 - $0,61100
Fiyatlar 4 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

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TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
03000
$0,12000 (Min: 3000)
$0,11900 (Min: 6000)
$0,11800 (Min: 9000)
$0,11700 (Min: 15000)
$0,11500 (Min: 30000)
Daha fazla göster
3 - 412 Aralık 2025 23:14Stokta Yok
Arrow
06000
$0,10860 (Min: 6000)
$0,09890 (Min: 9000)
$0,09740 (Min: 24000)
3 - 412 Aralık 2025 23:15Stokta Yok
Mouser
598461
$0,61100 (Min: 1)
$0,38000 (Min: 10)
$0,24300 (Min: 100)
$0,18400 (Min: 500)
$0,16500 (Min: 1000)
$0,14000 (Min: 3000)
$0,12700 (Min: 6000)
$0,11200 (Min: 9000)
Daha fazla göster
3 - 412 Aralık 2025 23:15Ekle
Farnell
01
$0,13100 (Min: 3000)
$0,10500 (Min: 9000)
3 - 412 Aralık 2025 23:15Stokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
0023 haftaPending refreshStokta Yok
Genel Bakış
Dokümanlar

Ürün Açıklaması

P-Channel 80 V 2.1A (Ta), 3A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Özellikler

  • Grade: -
  • FET Type: P-Channel
  • Vgs (Max): ±20V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 164mOhm @ 2.1A, 10V
  • Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
  • Drain to Source Voltage (Vdss): 80 V
  • Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 40 V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 3A (Tc)