0
Giriş Yap
Kayıt Ol
Ana Sayfa
Tüm Kategoriler
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
MOSFET N-CH 8V 12A PPAK SC70-6

SIA436DJ-T1-GE3

MOSFET N-CH 8V 12A PPAK SC70-6 | Vishay Siliconix
MOSFET N-CH 8V 12A PPAK SC70-6
Fiyat Aralığı
Fiyatlar 0 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

Collecting offers...

TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
003 - 4Pending refreshStokta Yok
Arrow
003 - 4Pending refreshStokta Yok
Mouser
003 - 4Pending refreshStokta Yok
Farnell
003 - 4Pending refreshStokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
002 - 3 haftaPending refreshStokta Yok
Genel Bakış
Dokümanlar

Ürün Açıklaması

N-Channel 8 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Özellikler

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±5V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: PowerPAK® SC-70-6
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
  • Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
  • Supplier Device Package: PowerPAK® SC-70-6
  • Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 5 V
  • Drain to Source Voltage (Vdss): 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1508 pF @ 4 V
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
https://www.vishay.com/docs/63535/sia436dj.pdf