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Discrete Semiconductor Products
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MOSFET P-CH 20V 3.1A SOT23-3

SI2301CDS-T1-GE3

MOSFET P-CH 20V 3.1A SOT23-3 | Vishay Siliconix
MOSFET P-CH 20V 3.1A SOT23-3
Fiyat Aralığı
$0,08080 - $0,69000
Fiyatlar 2 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

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TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
003 - 4Pending refreshStokta Yok
Arrow
003 - 4Pending refreshStokta Yok
Mouser
863271
$0,27200 (Min: 100)
$0,20800 (Min: 500)
$0,18600 (Min: 1000)
$0,15900 (Min: 3000)
$0,14500 (Min: 6000)
$0,12600 (Min: 9000)
$0,12400 (Min: 24000)
$0,69000 (Min: 1)
$0,42400 (Min: 10)
Daha fazla göster		3 - 412 Aralık 2025 22:46Ekle
Farnell
01
$0,28500 (Min: 5)
$0,27400 (Min: 25)
$0,14100 (Min: 100)
$0,13600 (Min: 250)
$0,11200 (Min: 500)
$0,08770 (Min: 1000)
$0,08080 (Min: 5000)
Daha fazla göster		3 - 412 Aralık 2025 22:47Stokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
0023 haftaPending refreshStokta Yok
Genel Bakış
Dokümanlar

Ürün Açıklaması

P-Channel 20 V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

Özellikler

  • Grade: -
  • FET Type: P-Channel
  • Vgs (Max): ±8V
  • Technology: MOSFET (Metal Oxide)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
  • Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Drain to Source Voltage (Vdss): 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
https://www.vishay.com/docs/68741/si2301cd.pdf