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Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
1200V/53MO,SICFET,G4,TO263-7

UF4C120053B7S

1200V/53MO,SICFET,G4,TO263-7 | onsemi
1200V/53MO,SICFET,G4,TO263-7
Fiyat Aralığı
$8,07600 - $13,15000
Fiyatlar 2 tedarikçiden derlenmiştir. KDV hariçtir. Miktara göre değişiklik gösterebilir.

Collecting offers...

TedarikçiStokMinFiyatTeslimatGüncellendiAdetİşlem
Future Electronics
003 - 4Pending refreshStokta Yok
Arrow
0800
$8,07600 (Min: 800)
3 - 422 Aralık 2025 07:10Stokta Yok
Mouser
003 - 4Pending refreshStokta Yok
Farnell
01
$13,15000 (Min: 1)
$11,96000 (Min: 5)
$10,77000 (Min: 10)
$10,32000 (Min: 50)
$9,87000 (Min: 100)
$9,67000 (Min: 250)
Daha fazla göster		3 - 413 Aralık 2025 03:58Stokta Yok
TME
003 - 4Pending refreshStokta Yok
Digi-Key
0023 haftaPending refreshStokta Yok
Genel Bakış
Dokümanlar

Ürün Açıklaması

N-Channel 1200 V 34A (Tj) 250W (Tc) Surface Mount D2PAK-7L

Özellikler

  • Grade: -
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Technology: SiCFET (Cascode SiCJFET)
  • FET Feature: -
  • Mounting Type: Surface Mount
  • Qualification: -
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
  • Power Dissipation (Max): 250W (Tc)
  • Supplier Device Package: D2PAK-7L
  • Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
  • Drain to Source Voltage (Vdss): 1200 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
https://www.onsemi.com/pub/Collateral/UF4C120053B7S-D.PDF